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1200V40A IGBT PIM Module
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1200V40A IGBT PIM Module Price And Quantity
- 10000 Piece
- 1.00 - 10.00 USD ($)/Piece
1200V40A IGBT PIM Module Trade Information
- 20000 Piece Per Month
- 7-15 Days
- Asia Australia Central America North America South America Eastern Europe Western Europe Middle East Africa
Product Description
We are manufacturer of 1200V 10A Power Module with all digital meters with moving system with interlocking & limit switches. These power modules are used in various residential as well as commercial places. It also consists of a microprocessor so that it can cut off automatically after it encounter any problem or fault. The 1200V 10A Power Module is available in various size and specifications. Further, they are tested by our quality assurance team to ensure they are free from defects.
Features :
- Trench + Filed Stop IGBT technology
- 10 Short circuit capability
- VCE (sat) with positive temperature coefficient
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications :
- Inverter for motor drive
- Air conditions
- Uninterruptible power supply
Absolute Maximum Ratings Tc=25oC unless otherwise noted
Technical Information : 1200V 10A
| IGBT- Inverter | |||
| Symbol | Description | Value | Unit |
| Vces | Collector-Emitter Voltage | 1200 | V |
| Vges | Gate-emitter Voltage | +20 | V |
| Ic | Collector Current @ TC = 25oC | 25 | A |
| Icm | Pulsed Collector Current tp = 1ms | 25 | A |
| PD | Maximum Power Dissipation | 110 | W |
| Diode-Inverter | |||
| Symbol | Description | Value | Unit |
| VRRM | Repetitive Peak Reverse Voltage | 1200 | V |
| IF | Diode Continuous forward Current | 10 | A |
| IFM | Diode Maximum forward Current tp = 1ms | 20 | A |
| Diode rectifier | |||
| Symbol | Description | Value | Unit |
| VRRM | Repetitive Peak Reverse Voltage | 1600 | V |
| IO | Average Output Current, 50Hz/60Hz, sine wave | 10 | A |
| IFSM | Surge Forward Current VR=0V, tp=10ms, Tj=45oC | 160 | A |
| I2t | I2t-value, VR=0V, t p = 10ms, Tj=45oC | 130 | A2s |
| IGBT - brake | |||
| Symbol | Description | Value | Unit |
| Vces | Collector-Emitter Voltage | 1200 | V |
| Vges | Gate-emitter Voltage | +20 | V |
| Ic | Collector Current @ TC = 25oC | 25 | A |
| Icm | Pulsed Collector Current tp = 1ms | 25 | A |
| PD | Maximum Power Dissipation | 110 | W |
| Diode Brake | |||
| Symbol | Description | Value | Unit |
| VRRM | Repetitive Peak Reverse Voltage | 1200 | V |
| IF | Diode Continuous forward Current | 10 | A |
| IFM | Diode Maximum forward Current tp = 1ms | 20 | A |
| Module | |||
| Symbol | Description | Value | Unit |
| Tjmax | Maximum Junction Temperature (inverter, Brake) | 150 | oC |
| Tjop | Operating Junction Temperature | -40 to + 150 | oC |
| TSTG | Storage Temperature Range | -40 to + 125 | oC |
| VISO | Isolation Voltage RMS,f=50Hz, t=1 min | 2500 | V |
| F | Mounting Force Per Clamp | 20 to 50 | N |
Enter Buying Requirement Details
Other Products in 'IGBT Power Semiconductor' category
We are
accepting inquiries from these countries India, Sri Lanka, Pakistan,
Bangladesh, Afghanistan and Nepal.
RONGTECH INDUSTRY (SHANGHAI) INC.
- Room - 1123-1127, No.81 South QinZhou Road, XuHui,Shanghai - 200235, China
- Phone : 86-21-64516109
- Fax :86-21-54481689
- Mr. Droden Zhang (Sales Manager)
- Mobile : +8618001811078
- Send Inquiry
- Model:0086-18001811078
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