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1200V25A PIM Module
1.00 - 10.00 USD ($)/Piece
Product Details:
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1200V25A PIM Module Price And Quantity
- 10000 Piece
- 1.00 - 10.00 USD ($)/Piece
1200V25A PIM Module Trade Information
- 20000 Piece Per Month
- 7-15 Days
- Asia Australia Central America North America South America Eastern Europe Western Europe Middle East Africa
Product Description
We are manufacturer of 1200V 25A Power Module and we are provided with complete modular construction. These have standardized verticals & feeder sizes with bolted partition trays & mounting plates. It provides ease of maintenance & replacement and supports for Bus bar system. The 1200V 25A Power Module offered to clients have got a high usage in power generating plants for captive consumption. These products are designed in two or three tier construction with a single and double bush bar system.
Absolute Maximum Ratings Tc=25oC unless otherwise noted
Technical Information 1200V 25A
| IGBT- Inverter | |||
| Symbol | Description | Value | Unit |
| Vces | Collector-Emitter Voltage | 1200 | V |
| Vges | Gate-emitter Voltage | +20 | V |
| Ic | Collector Current @ TC = 25oC | 50 | A |
| Icm | Pulsed Collector Current tp = 1ms | 50 | A |
| PD | Maximum Power Dissipation @ Tj=175oC | 190 | W |
| Diode-Inverter | |||
| Symbol | Description | Value | Unit |
| VRRM | Repetitive Peak Reverse Voltage | 1200 | V |
| IF | Diode Continuous forward Current | 25 | A |
| IFM | Diode Maximum forward Current tp = 1ms | 50 | A |
| Diode rectifier | |||
| Symbol | Description | Value | Unit |
| VRRM | Repetitive Peak Reverse Voltage | 1600 | V |
| IO | Average Output Current, 50Hz/60Hz, sine wave | 30 | A |
| IFSM | Surge Forward Current VR=0V, tp=10ms, Tj=45oC | 360 | A |
| I2t | I2t-value, VR=0V, t p = 10ms, Tj=45oC | 640 | A2s |
| IGBT - brake | |||
| Symbol | Description | Value | Unit |
| Vces | Collector-Emitter Voltage | 1200 | V |
| Vges | Gate-emitter Voltage | +20 | V |
| Ic | Collector Current @ Tc = 25oC | 25 | A |
| Icm | Pulsed Collector Current tp = 1ms | 30 | A |
| PD | Maximum Power Dissipation @ Tj=175oC | 122 | W |
| Diode Brake | |||
| Symbol | Description | Value | Unit |
| VRRM | Repetitive Peak Reverse Voltage | 1200 | V |
| IF | Diode Continuous forward Current | 15 | A |
| IFM | Diode Maximum forward Current tp = 1ms | 30 | A |
| Module | |||
| Symbol | Description | Value | Unit |
| Tjmax | Maximum Junction Temperature (inverter, Brake) | 150 | oC |
| Tjop | Operating Junction Temperature | -40 to + 150 | oC |
| TSTG | Storage Temperature Range | -40 to + 125 | oC |
| VISO | Isolation Voltage RMS,f=50Hz, t=1 min | 2500 | V |
| F | Mounting Force Per Clamp | 20 to 50 | N |
Enter Buying Requirement Details
Other Products in 'IGBT Power Semiconductor' category
We are
accepting inquiries from these countries India, Sri Lanka, Pakistan,
Bangladesh, Afghanistan and Nepal.
RONGTECH INDUSTRY (SHANGHAI) INC.
- Room - 1123-1127, No.81 South QinZhou Road, XuHui,Shanghai - 200235, China
- Phone : 86-21-64516109
- Mr. Droden Zhang (Sales Manager)
- Mobile : +8618001811078
- Send Inquiry
- Model:0086-18001811078
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