650V25A Discrete IGBT For Inverter

Product

Package

Packaging

RGW25N120T1

TO247

Tube

Parameter

Symbol

Value

Unit

Collector-Emitter Breakdown Voltage

VCE

1200

V

DC collector current, limited by Tjmax TC = 25°C

TC = 100°C

IC

50

25

A

Diode Forward current, limited by Tjmax TC = 25°C

TC = 100°C

IF

50

25

A

Continuous Gate-emitter voltage

VGE

±20

V

Transient Gate-emitter voltage

VGE

±30

V

Turn off safe operating area VCE ≤1200V, Tj ≤ 150°C

-

100

A

Pulsed collector current, VGE= 15V, tp limited by Tjmax

ICM

100

A

Short Circuit Withstand Time, VGE= 15V, VCE≤ 600V

Tsc

10

μs

Power dissipation , Tj=25℃

Ptot

250

W

Operating junction temperature

Tj

-40...+150

°C

Storage temperature

Ts

-55...+150

°C

Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s

-

260

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Static

Collector-Emitter

breakdown voltage

BVCES

VGE=0V , IC=250μA

1200

-

-

V

Gate threshold voltage

VGE(th)

VGE=VCE, IC=250μA

5.2

6.0

6.8

V

Collector-Emitter Saturation voltage

VCE(sat)

VGE=15V, IC=25A Tj = 25°C

Tj = 150°C

-

-

1.65

2.0

2.05

-

V

Zero gate voltage collector current

ICES

VCE = 1200V, VGE = 0V Tj = 25°C

Tj = 150°C

-

-

-

-

100

1000

μA

Gate-emitter leakage current

IGES

VCE = 0V, VGE = ±20V

-

-

100

nA

Transconductance

gfs

VCE=20V, IC=20A

-

20

-

S