+8618001811078

QUICK CALL

Working hours:

Mon-Sat:9.30am to 7.00pm

650V25A Discrete IGBT For Inverter

650V25A Discrete IGBT For Inverter

Product Details:

  • Supply Ability : 20000 Piece Per Month
1.00 - 10.00 USD ($)/Piece
X

Price And Quantity

  • 1.00 - 10.00 USD ($)/Piece
  • 10 Piece

Trade Information

  • 20000 Piece Per Month
  • 7-15 Days

Product Description

Features

 

  • High breakdown voltage to 1200V for improved reliability
  • Trench-Stop Technology offering :
  • Very tight parameter distribution
  • High ruggedness, temperature stable behavior
  • Short circuit withstand time – 10s
  • Low VCE(SAT)
  • Easy parallel switching capability due to positive temperature coefficient in VCE(SAT)
  • Enhanced avalanche capability

 

VCE

 1200

 V

IC

 25

 A

 VCE(SAT) IC=25A

 1.65

 V


Product

Package

Packaging

RGW25N120T1

TO247

Tube

 Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Emitter Breakdown Voltage

VCE

1200

V

DC collector current, limited by Tjmax TC = 25°C

TC = 100°C

 

IC

 

50

25

 

A

Diode Forward current, limited by Tjmax TC = 25°C

TC = 100°C

 

IF

 

50

25

 

A

Continuous Gate-emitter voltage

VGE

±20

V

Transient Gate-emitter voltage

VGE

±30

V

Turn off safe operating area VCE ≤1200V, Tj  150°C

-

100

A

Pulsed collector current, VGE= 15V, tlimited by Tjmax

ICM

100

A

Short Circuit Withstand Time, VGE= 15V, VCE≤ 600V

Tsc

10

μs

Power dissipation , Tj=25℃

Ptot

250

W

Operating junction temperature

Tj

-40...+150

°C

Storage temperature

Ts

-55...+150

°C

Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s

 

-

 

260

 

°C

Thermal Resistance 

Parameter

Symbol

Max. Value

Unit

IGBT thermal resistance, junction - case

Rθ(j-c)

0.5

K/W

Diode thermal resistance, junction - case

Rθ(j-c)

1

K/W

Thermal resistance, junction - ambient

Rθ(j-a)

40

K/W

Electrical Characteristics of the IGBTTj= 25 unless otherwise specified):

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Static

Collector-Emitter

breakdown voltage

BVCES

VGE=0V , IC=250μA

1200

-

-

V

 

Gate threshold voltage

 

VGE(th)

 

VGE=VCE, IC=250μA

 

5.2

 

6.0

 

6.8

 

V

 

Collector-Emitter Saturation voltage

 

VCE(sat)

VGE=15V, IC=25A Tj = 25°C

Tj = 150°C

 

-

-

 

1.65

2.0

 

2.05

-

 

V

 

Zero gate voltage collector current

 

ICES

VCE = 1200V, VGE = 0V Tj = 25°C

Tj = 150°C

 

-

-

 

-

-

 

100

1000

 

μA

Gate-emitter leakage current

IGES

VCE = 0V, VGE = ±20V

-

-

100

nA

Transconductance

gfs

VCE=20V, IC=20A

-

20

-

S

 

Parameter

Symbol

Conditions

Min

Type

Max

Unit

Dynamic

Input capacitance

Cies

 

 

VCE = 25V, VGE = 0V,

f = 1MHz

-

2340

-

 

 

pF

Output capacitance

Coes

-

105

-

Reverse transfer capacitance

Cres

-

60

-

Gate charge

QG

VCC = 960V, IC = 25A, VGE = 15V

-

135

-

nC

 

Short circuit collector current

 

ICSC

VGE=15V,tSC10us VCC=600V,

Tjstart=25°C

 

-

 

210

 

-

 

A

 Switching Characteristic, Inductive Load

Parameter

Symbol

Conditions

Min

Type

Max

Unit

Dynamic , at Tj = 25°C

Turn-on delay time

td(on)

 

 

 

VCC = 600V, IC = 25A, VGE = 0/15V,

Rg=12Ω

-

45

-

ns

Rise time

tr

-

21

-

ns

Turn-on energy

Eon

-

2.2

-

mJ

Turn-off delay time

td(off)

-

200

-

ns

Fall time

tf

-

93

-

ns

Turn-off energy

Eoff

-

0.75

-

mJ


Electrical Characteristics of the DIODETj= 25 unless otherwise specified
|

Parameter

Symbol

Conditions

Min

Type

Max

Unit

Dynamic

Diode Forward Voltage

VFM

IF = 25A

-

3.0

-

V

Reverse Recovery Time

Trr

 

 IF= 25A,di/dt= 200A/μs

-

180

-

ns

Reverse Recovery Current

Irr

-

5

-

A

Reverse Recovery Charge

Qrr

-

270

-

nC


RONGTECH INDUSTRY (SHANGHAI) INC.

* Tips on getting accurate quotes. Please include product name, order quantity, usage, special requests if any in your inquiry.



We are accepting inquiries from these countries India, Sri Lanka, Pakistan, Bangladesh, Afghanistan and Nepal.
Back to top