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650V50A Discrete IGBT For Welding Machine

650V50A Discrete IGBT For Welding Machine

Product Details:

  • Supply Ability : 20000 Piece Per Month
1.00 - 10.00 USD ($)/Piece
X

Price And Quantity

  • 10 Piece
  • 1.00 - 10.00 USD ($)/Piece

Trade Information

  • 20000 Piece Per Month
  • 7-15 Days

Product Description

Rongtech 650V Trench Field Stop IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for motion control, solar application and welding machine

VCE

650

V

IC

50

A

VCE(SAT) IC=50A

1.8

V


FEATURE

 

  • High breakdown voltage to 650V for improved reliability
  • Trench-Stop Technology offering :
  • High speed switching
  • High ruggedness, temperature stable
  • Short circuit withstand time – 5s
  • Low VCEsat
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat
  • Enhanced avalanche capability

 

APPLICATION

 

  • Uninterruptible Power Supplies
  • Inverter
  • Welding Converters
  • PFC applications
  • Converter with high switching frequency

 

Maximum Ratings (Tj= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

Collector-Emitter Breakdown Voltage

VCE

650

V

DC collector current, limited by Tjmax TC = 25°C

TC = 100°C

 

IC

100-50

 

A

Diode Forward current, limited by Tjmax TC = 25°C

TC = 100°C

 

IF

100-50

A

Turn off safe operating area VCE ≤650V,

Tj  150°C

 

200

A

Short Circuit Withstand Time, VGE= 15V, VCE≤ 400V

Tsc

5

μs

Operating junction temperature Tj

 

-40...+150

°C

Storage temperature

Ts

-55...+150

°C

Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s

 

260

°C

 Thermal Resistance

Parameter

Symbol

Max. Value

Unit

IGBT thermal resistance, junction - case

Rθ(j-c)

0.48

K/W

Diode thermal resistance, junction - case

Rθ(j-c)

1.1

K/W

Thermal resistance, junction - ambient

Rθ(j-a)

40

K/W

Electrical Characteristics (Tj= 25℃ unless otherwise specified

Parameter

Symbol

Conditions

Min

Type

Max

Unit

Static

Collector-Emitter Breakdown Voltage

 

BVCES

VGE=0V , IC=250uA

650

 

-

V

VGE=0V , IC=1mA

650

 

 

V

Gate Threshold Voltage

VGE(th)

VGE=VCE, IC=250uA

4.1

5.0

5.7

V

Collector-Emitter Saturation Voltage

 

VCE(sat)

 

VGE=15V, IC=50A

Tj = 25°C

Tj = 150°C

 

-

-

 

 

1.8

2.0

 

 

2.3

V
V

Zero gate voltage collector current

ICES

VCE = 650V, VGE = 0V

Tj = 25°C

Tj = 150°C

 

 

0.1

40
1000

μA

Gate-emitter leakage current

IGES

VCE = 0V, VGE = 20V

 

 

100

nA


RONGTECH INDUSTRY (SHANGHAI) INC.

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