650V50A Discrete IGBT For Welding Machine

Parameter

Symbol

Value

Unit

Collector-Emitter Breakdown Voltage

VCE

650

V

DC collector current, limited by Tjmax TC = 25°C

TC = 100°C

IC

100-50

A

Diode Forward current, limited by Tjmax TC = 25°C

TC = 100°C

IF

100-50

A

Turn off safe operating area VCE ≤650V,

Tj ≤ 150°C

200

A

Short Circuit Withstand Time, VGE= 15V, VCE≤ 400V

Tsc

5

μs

Operating junction temperature Tj

-40...+150

°C

Storage temperature

Ts

-55...+150

°C

Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s

260

°C

Parameter

Symbol

Max. Value

Unit

IGBT thermal resistance, junction - case

Rθ(j-c)

0.48

K/W

Diode thermal resistance, junction - case

Rθ(j-c)

1.1

K/W

Thermal resistance, junction - ambient

Rθ(j-a)

40

K/W

Parameter

Symbol

Conditions

Min

Type

Max

Unit

Static

Collector-Emitter Breakdown Voltage

BVCES

VGE=0V , IC=250uA

650

-

V

VGE=0V , IC=1mA

650

V

Gate Threshold Voltage

VGE(th)

VGE=VCE, IC=250uA

4.1

5.0

5.7

V

Collector-Emitter Saturation Voltage

VCE(sat)

VGE=15V, IC=50A

Tj = 25°C

Tj = 150°C

-

-

1.8

2.0

2.3

V
V

Zero gate voltage collector current

ICES

VCE = 650V, VGE = 0V

Tj = 25°C

Tj = 150°C

0.1

40
1000

μA

Gate-emitter leakage current

IGES

VCE = 0V, VGE = 20V

100

nA