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Discrete IGBTs

Discrete IGBTs

Product Details:

X

Product Description

Maximum Rating

Parameter

Symbol

Value

unit

Collector- Emitter Breakdown voltage

VCE

1200

V

DC collector current, limited by Tjmax
Tc=25°C
Tc=100
°C

Ic

80
40

A

Diode forward current, limited by Tjmax
Tc=25°C
Tc=100
°C

IF

80

40

A

Continuous gate- emitter voltage

VCE

±20

V

Transient gate- emitter voltage

VCE

±30

V

Turn off safe operating area VCE1200V,Tj ≤ 150°C


160

A

Pulsed collector current VCE =15V, tP limited by Tjmax

ICM

160

A

Diode pulse current tP limited by  Tjmax

IFpuls

10

µs

Short circuit withstand time, VCE=15V, 600 V

Tsc

417

W

Power dissipation ,Tj= 25°C

Ptot

-40...+150

°C

Operating temperature

Tj

-55...+150

°C

Storage temperature

Ts

260

°C

Thermal Resistance

Parameter

Symbol

Max. value

Unit

IGBT thermal resistance, junction – case

R0(j-c)

0.3

K/W

Diode thermal

R0(j-c)

0.6

K/W

Thermal resistance, junction – case

R0(j-a)

40

K/W

Electrical Characteristic of the IGBT

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Static







Collector – Emitter breakdown voltage

BVCES

VGE=0V,Ic=250µA

1200

1300

-

V

Gate threshold voltage

VGE(th)

VGE=VGE,Ic= 250µA

5.1

5.8

6.4

V

Collector – Emitter saturation voltage

VCE(sat)

VGE=15V, Ic =40A
Tj=25°C
Tj=150
°C

-

-

2.0


2.5

2.5

-

V

Zero gate voltage Collector current

ICES

VCE=1200V, VGE=0V
Tj=25°C
Tj=150
°C

-

-

-

-

10
2500

µA

Gate -emitter leakage current

IGES

VcE=0V, VGE =±20V

-

-

100

nA

Trans conductance

gfs

VCE=20V,Ic=15A

-

15

-

S


RONGTECH INDUSTRY (SHANGHAI) INC.

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