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Discrete IGBTs

Discrete IGBTs

Product Details:

  • Supply Ability : 20000 Piece Per Month
1.00 - 10.00 USD ($)/Piece
X

Price And Quantity

  • 1.00 - 10.00 USD ($)/Piece
  • 10 Piece

Trade Information

  • 20000 Piece Per Month
  • 7-15 Days

Product Description

Symbolic to all the success that we have gained in the industry, remains our status as the leading trader and supplier of an interesting range of Discrete IGBTs. They find their applications in industrial, traction, energy and automotive markets. This Discrete IGBTs  provides an integrated solution with low insertion loss and low power dissipation than shunt solution. The provided load cell is very popular in the market for featuring variegated attributes such as easy installation, compact design, accurate result and user-friendly interface.


Maximum Rating

Parameter

Symbol

Value

unit

Collector- Emitter Breakdown voltage

VCE

1200

V

DC collector current, limited by Tjmax
Tc=25°C
Tc=100
°C

Ic

80
40

A

Diode forward current, limited by Tjmax
Tc=25°C
Tc=100
°C

IF

80

40

A

Continuous gate- emitter voltage

VCE

±20

V

Transient gate- emitter voltage

VCE

±30

V

Turn off safe operating area VCE≤1200V,Tj ≤ 150°C


160

A

Pulsed collector current VCE =15V, tP limited by Tjmax

ICM

160

A

Diode pulse current tP limited by  Tjmax

IFpuls

10

µs

Short circuit withstand time, VCE=15V, ≤600 V

Tsc

417

W

Power dissipation ,Tj= 25°C

Ptot

-40...+150

°C

Operating temperature

Tj

-55...+150

°C

Storage temperature

Ts

260

°C

Thermal Resistance

Parameter

Symbol

Max. value

Unit

IGBT thermal resistance, junction – case

R0(j-c)

0.3

K/W

Diode thermal

R0(j-c)

0.6

K/W

Thermal resistance, junction – case

R0(j-a)

40

K/W

Electrical Characteristic of the IGBT

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Static







Collector – Emitter breakdown voltage

BVCES

VGE=0V,Ic=250µA

1200

1300

-

V

Gate threshold voltage

VGE(th)

VGE=VGE,Ic= 250µA

5.1

5.8

6.4

V

Collector – Emitter saturation voltage

VCE(sat)

VGE=15V, Ic =40A
Tj=25°C
Tj=150
°C

-

-

2.0


2.5

2.5

-

V

Zero gate voltage Collector current

ICES

VCE=1200V, VGE=0V
Tj=25°C
Tj=150
°C

-

-

-

-

10
2500

µA

Gate -emitter leakage current

IGES

VcE=0V, VGE =±20V

-

-

100

nA

Trans conductance

gfs

VCE=20V,Ic=15A

-

15

-

S


RONGTECH INDUSTRY (SHANGHAI) INC.

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