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DP MOS Power Transistor

DP MOS Power Transistor
DP MOS Power Transistor
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Product Code : RVS47N60PN
Product Description

Owing to our ethical business practices and transparent policies, we have been able to become one of the reputed suppliers of DP MOS Power Transistor. The units are procured by our expert agents from the certified and reliable vendors of the market after conducting several market surveys. We can make the units available for the clients in different models and specifications as per their requirements. Used in various electronic components, our DP MOS Power Transistors are offered at pocket friendly prices. They are known for their features such as high reliability, performance and less power loss.

Features :

  • 47A, 600V, RDS(on)(typ.) = 55mΩ@VGS =10V
  • New revolutionary high voltage technology
  • Ultra low gate charge
  • Periodic avalanche rated
  • Extreme dv/dt rated
  • High peak current capability


Ordering Information :

Part No.

Package

Marking

Material

Packing

RVS47N60PN

TO-3P

47N60

Pb free

Tube

RVS47N60PT

TO-3PN

47N60

Pb free

Tube

Absolute Maximum Ratings (Tc=25oC unless otherwise noted)

Characteristics

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

600

V

Gate-Source Voltage

VGS

+30

V

Drain Current

Tc=25oC

lD

47

A

Tc=100oC

30

Drain Current Pulsed

IDM

140

A

Power Dissipation (Tc=25oC)
-Derate above 25oC

PD

415

W

3.32

W/oC

Single Pulsed Avalanche Energy (Note 1)

EAS

2103

mJ

Operation Junction Temperature Range

TJ

-55~+150

OC

Storage Temperature Range

Tstg

-55~+150

OC

Thermal Characteristics :

Characteristics

Symbol

Ratings

Unit

Thermal Resistance, Junction-to-Case

RθJC

0.3

oC/W


RONGTECH INDUSTRY (SHANGHAI) INC.
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