
Owing to our ethical business practices and transparent policies, we have been able to become one of the reputed suppliers of DP MOS Power Transistor. The units are procured by our expert agents from the certified and reliable vendors of the market after conducting several market surveys. We can make the units available for the clients in different models and specifications as per their requirements. Used in various electronic components, our DP MOS Power Transistors are offered at pocket friendly prices. They are known for their features such as high reliability, performance and less power loss.
Features :
Ordering Information :
Part No. | Package | Marking | Material | Packing |
RVS47N60PN | TO-3P | 47N60 | Pb free | Tube |
RVS47N60PT | TO-3PN | 47N60 | Pb free | Tube |
Absolute Maximum Ratings (Tc=25oC unless otherwise noted)
Characteristics | Symbol | Ratings | Unit | |
Drain-Source Voltage | VDS | 600 | V | |
Gate-Source Voltage | VGS | +30 | V | |
Drain Current | Tc=25oC | lD | 47 | A |
Tc=100oC | 30 | |||
Drain Current Pulsed | IDM | 140 | A | |
Power Dissipation (Tc=25oC) | PD | 415 | W | |
3.32 | W/oC | |||
Single Pulsed Avalanche Energy (Note 1) | EAS | 2103 | mJ | |
Operation Junction Temperature Range | TJ | -55~+150 | OC | |
Storage Temperature Range | Tstg | -55~+150 | OC |
Thermal Characteristics :
Characteristics | Symbol | Ratings | Unit |
Thermal Resistance, Junction-to-Case | RθJC | 0.3 | oC/W |
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