DP MOS Power Transistor

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Product Code : RVS47N60PN

Product Description

Owing to our ethical business practices and transparent policies, we have been able to become one of the reputed suppliers of DP MOS Power Transistor. The units are procured by our expert agents from the certified and reliable vendors of the market after conducting several market surveys. We can make the units available for the clients in different models and specifications as per their requirements. Used in various electronic components, our DP MOS Power Transistors are offered at pocket friendly prices. They are known for their features such as high reliability, performance and less power loss.

Features :

47A, 600V, RDS(on)(typ.) = 55mΩ@V_GS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability

Ordering Information :

Part No.	Package	Marking	Material	Packing
RVS47N60PN	TO-3P	47N60	Pb free	Tube
RVS47N60PT	TO-3PN	47N60	Pb free	Tube

Absolute Maximum Ratings (Tc=25^oC unless otherwise noted)

Characteristics		Symbol	Ratings	Unit
Drain-Source Voltage		V_DS	600	V
Gate-Source Voltage		V_GS	+30	V
Drain Current	Tc=25^oC	l_D	47	A
Drain Current	Tc=100^oC	l_D	30	A
Drain Current Pulsed		I_DM	140	A
Power Dissipation (Tc=25^oC) -Derate above 25^oC		P_D	415	W
Power Dissipation (Tc=25^oC) -Derate above 25^oC		P_D	3.32	W/^oC
Single Pulsed Avalanche Energy (Note 1)		E_AS	2103	mJ
Operation Junction Temperature Range		T_J	-55~+150	^OC
Storage Temperature Range		Tstg	-55~+150	^OC