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High Voltage SJ-FET Mosfet Of Solar Inverter

High Voltage SJ-FET Mosfet Of Solar Inverter

Product Details:

  • Supply Ability : 20000 Piece Per Month
1.00 - 10.00 USD ($)/Piece
X

Price And Quantity

  • 10 Piece
  • 1.00 - 10.00 USD ($)/Piece

Trade Information

  • 20000 Piece Per Month
  • 7-15 Days

Product Description

Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.

Features

 

  • Multi-Epi process SJ-FET 
  • 850V @TJ = 150℃
  • Typ. RDS(on) = 0.48Ω 
  • Ultra Low Gate Charge (typ. Qg = 13nC) 
  • 100% avalanche tested

 

 Absolute Maximum Ratings

Symbol

Parameter

RTP_B_T80R500S

RTF80R500S

Unit

VDSS

Drain-Source Voltage

800

V

ID

DrainCurrent -Continuous (TC = 25) -Continuous (TC = 100)

10.5* 6.7*

A

IDM

Drain Current - Pulsed (Note 1)

30*

A

VGSS

Gate-Source voltage

±30

V

EAS

Single Pulsed Avalanche Energy (Note 2)

210

mJ

IAR

Avalanche Current (Note 1)

1.8

A

EAR

Repetitive Avalanche Energy (Note 1)

0.32

mJ

dv/dt

Peak Diode Recovery dv/dt (Note 3)

15

V/ns

dVds/dt

Drain Source voltage slope (Vds=640V)

50

V/ns

PD

Power Dissipation (TC = 25)

83

31

W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

TL

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

300

 


RONGTECH INDUSTRY (SHANGHAI) INC.

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