+8618001811078

QUICK CALL

Working hours:

Mon-Sat:9.30am to 7.00pm

Medium Voltage Mosfet

Medium Voltage Mosfet

Product Details:

1.00 - 10.00 USD ($)/Piece
X

Medium Voltage Mosfet Price And Quantity

  • 10000 Piece
  • 1.00 - 10.00 USD ($)/Piece

Medium Voltage Mosfet Trade Information

  • 20000 Piece Per Month
  • 7-15 Days
  • Asia Australia Central America North America South America Eastern Europe Western Europe Middle East Africa

Product Description

Description:

The RT series products utilizes Rongtech's outstanding grand turbo process and packaging techniques to achieve ultral low on-resistance and low gate charge and to provide the industry's best-in-class performance. These features make this series products extremely efficient, temperature characteristics and reliable for use in synchronous rectification, battery protection, sever power supply, motor, micro-inverter etc.

Features and Benefits:

 

  • Grand Turbo MOSFET process technology.
  • Optimized cell structure for reducing noise and ringing.
  • Low on-resistance and low gate charge.
  • Fast switching and reverse body recovery.
  • Featuring low switching and drive losses.
  • High ruggedness and robustness. 

 

Main Product Characteristics : 

V(BR)DSS

100V

RDS(ON)

4.4m(max.)

ID

180A

Absolute Maximum Ratings (TC=25C unless otherwise specified) :

Parameter

Symbol

Max.

Unit

Drain-Source Voltage

VDS

100

V

Gate-to-Source Voltage

VGS

+ 20

V

Continuous Drain Current, @ Steady-State 1

ID @ TC = 25oC

180

A

Continuous Drain Current, @ Steady-State

ID @ TC = 100oC

130

A

Pulsed Drain Current 2

IDM

720

A

Power Dissipation

PD @TC = 25oC

208

W

Linear Derating Factor

1.7

W/oC

Single Pulse Avalanche Energy3

EAS

780

mJ

Junction-to-Case

RJC

0.6

C/W

Junction-to-Ambient (PCB Mounted, Steady-State) 4

RJA

62.5

C/W

Operating Junction and Storage Temperature Range

TJ /TSTG

-55 to + 150

C

Electrical Characteristics (TC=25C unless otherwise specified)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250A

100

-

-

V

Drain-to-Source Leakage Current

IDSS

VDS=100V, VGS=0V

-

-

1

uA

-

-

50

Gate-to-Source Forward Leakage IGSS

IGSS

VGS =20V

-

-

100

nA

VGS =-20V

-

-

-100

Static Drain-to-Source On- Resistance

RDS (on)

VGS=10V, ID=50A

-

3.6

4.4

m

Gate Resistance

Rg

-1MHz


1.8


Gate Threshold Voltage

VGS (th)

VDS=VGS, ID=250uA

2.2

3

3.9

V

Input Capacitance

Ciss

VGS=0V, VDS=5V
=1MHz

-

8402

-

pF

Output Capacitance

Coss

-

890

-

Reverse transfer capacitance

Crss

-

34

-

Total Gate Charge

Qg

ID=20A, VDS=50V, VGS=10V

-

152

-

nC

Gate-to-Source Charge

Qgs

-

45.5

-

Gate-to-Drain("Miller") Charge

Qgd

-

45.2

-

Turn-on Delay Time

td (on)

VGS=10T, VDS=50V, RL=1, RGEN=3

-

40

-

nS

Rise Time

tr

-

66

-

Turn-Off Delay Time

td (off)

-

101

-

Fall Time

tf

-

41

-

Source-Drain Ratings and Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max

Unit

Continuous Source Current

(Body Diode)

Is

MOSFET symbol showing

the integral reverse

p-n junction diode.

-

-

180

A

Pulsed Source Current (Body Diode)

Ism

-

-

720

A

Diode Forward Voltage

VSD

IS=50A, VGS=0V

-

1

1.2

V

Reverse Recovery Time

trr

TJ = 25C, IF =50A, di/dt =

100A/s


82


ns

Reverse Recovery Charge

Qrr


0.24


uc

Notes :

1. Pulse test: Pulse Width<300us, Duty cycle <2%.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. L=0.5mH, VDD=80V, TJ=25oC.
4. Device mounted on FR-4 PCB, 1inch x 0.85inch x 0.062 inch.


Enter Buying Requirement Details
Email Id
Mobile number

Other Products in 'Mosfet Power Semiconductor' category



We are accepting inquiries from these countries India, Sri Lanka, Pakistan, Bangladesh, Afghanistan and Nepal.
Back to top