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650V25A Discrete IGBT For Inverter

650V25A Discrete IGBT For Inverter

Product Details:

  • Supply Ability : 20000 , , Piece Per Month
1.00 - 10.00 USD ($)/Piece
X

Price And Quantity

  • 10 , , Piece
  • 1.00 - 10.00 USD ($)/Piece

Trade Information

  • 20000 , , Piece Per Month
  • 7-15 Days

Product Description

Features

 

  • High breakdown voltage to 1200V for improved reliability
  • Trench-Stop Technology offering :
  • Very tight parameter distribution
  • High ruggedness, temperature stable behavior
  • Short circuit withstand time 10s
  • Low VCE(SAT)
  • Easy parallel switching capability due to positive temperature coefficient in VCE(SAT)
  • Enhanced avalanche capability

 

VCE

 1200

 V

IC

 25

 A

 VCE(SAT) IC=25A

 1.65

 V


Product

Package

Packaging

RGW25N120T1

TO247

Tube

 Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Emitter Breakdown Voltage

VCE

1200

V

DC collector current, limited by Tjmax TC = 25C

TC = 100C

 

IC

 

50

25

 

A

Diode Forward current, limited by Tjmax TC = 25C

TC = 100C

 

IF

 

50

25

 

A

Continuous Gate-emitter voltage

VGE

20

V

Transient Gate-emitter voltage

VGE

30

V

Turn off safe operating area VCE 1200V, Tj  150C

-

100

A

Pulsed collector current, VGE= 15V, tlimited by Tjmax

ICM

100

A

Short Circuit Withstand Time, VGE= 15V, VCE 600V

Tsc

10

s

Power dissipation , Tj=25

Ptot

250

W

Operating junction temperature

Tj

-40...+150

C

Storage temperature

Ts

-55...+150

C

Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s

 

-

 

260

 

C

Thermal Resistance 

Parameter

Symbol

Max. Value

Unit

IGBT thermal resistance, junction - case

R(j-c)

0.5

K/W

Diode thermal resistance, junction - case

R(j-c)

1

K/W

Thermal resistance, junction - ambient

R(j-a)

40

K/W

Electrical Characteristics of the IGBTTj= 25 unless otherwise specified

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Static

Collector-Emitter

breakdown voltage

BVCES

VGE=0V , IC=250A

1200

-

-

V

 

Gate threshold voltage

 

VGE(th)

 

VGE=VCE, IC=250A

 

5.2

 

6.0

 

6.8

 

V

 

Collector-Emitter Saturation voltage

 

VCE(sat)

VGE=15V, IC=25A Tj = 25C

Tj = 150C

 

-

-

 

1.65

2.0

 

2.05

-

 

V

 

Zero gate voltage collector current

 

ICES

VCE = 1200V, VGE = 0V Tj = 25C

Tj = 150C

 

-

-

 

-

-

 

100

1000

 

A

Gate-emitter leakage current

IGES

VCE = 0V, VGE = 20V

-

-

100

nA

Transconductance

gfs

VCE=20V, IC=20A

-

20

-

S

 

Parameter

Symbol

Conditions

Min

Type

Max

Unit

Dynamic

Input capacitance

Cies

 

 

VCE = 25V, VGE = 0V,

f = 1MHz

-

2340

-

 

 

pF

Output capacitance

Coes

-

105

-

Reverse transfer capacitance

Cres

-

60

-

Gate charge

QG

VCC = 960V, IC = 25A, VGE = 15V

-

135

-

nC

 

Short circuit collector current

 

ICSC

VGE=15V,tSC10us VCC=600V,

Tjstart=25C

 

-

 

210

 

-

 

A

 Switching Characteristic, Inductive Load

Parameter

Symbol

Conditions

Min

Type

Max

Unit

Dynamic , at Tj = 25C

Turn-on delay time

td(on)

 

 

 

VCC = 600V, IC = 25A, VGE = 0/15V,

Rg=12

-

45

-

ns

Rise time

tr

-

21

-

ns

Turn-on energy

Eon

-

2.2

-

mJ

Turn-off delay time

td(off)

-

200

-

ns

Fall time

tf

-

93

-

ns

Turn-off energy

Eoff

-

0.75

-

mJ


Electrical Characteristics of the DIODETj= 25 unless otherwise specified
|

Parameter

Symbol

Conditions

Min

Type

Max

Unit

Dynamic

Diode Forward Voltage

VFM

IF = 25A

-

3.0

-

V

Reverse Recovery Time

Trr

 

 IF= 25A,di/dt= 200A/s

-

180

-

ns

Reverse Recovery Current

Irr

-

5

-

A

Reverse Recovery Charge

Qrr

-

270

-

nC

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