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Part Name | Package | Marking |
RTW65R041E | TO247 | RTW65R041E |
Key Performance Parameters :
Parameter | Value | Unit |
VDS @ Tj,max | 700 | V |
RDS(on),max | 41 | m |
Qg,typ | 133.5 | nC |
ID,pulse | 240 | A |
Maximum ratings :
Parameter | Symbol | Values | Unit | Note / Test Condition | ||
Min. | Typ. | Max. | ||||
Continuous drain current1) | /D | | - | 80 | A | TC=25C |
Pulsed drain current2) | ID, pulse | - | - | 240 | A | TC=25C |
Avalanche energy, single pulse | EAS | - | - | 980 | mJ | Tc=25oC, VDD=50V, L=10mH, RG=25 |
MOSFET dv/dt ruggedness | dv/dt | - | - | 4.7 | V/ns | VDS=0...150V |
Gate source voltage (static) | VGS | -20 | - | 20 | V | static; |
Gate source voltage (dynamic) | VGS | -30 | - | 30 | V | AC (f>1 Hz) |
Power dissipation | Ptot | - | - | 481 | W | TC=25C |
Storage temperature | Tstg | -55 | - | 150 | C | |
Operating junction temperature | Tj | -55 | - | 150 | C | |
Reverse diode dv/dt3) | dv/dt | - | - | 15 | V/ns | VDS=0...400V, ISD<=IS, Tj=25C |
Thermal characteristics :
Parameter | Symbol | Values | Unit | Note / Test Condition | ||
Min. | Typ. | Max. | ||||
Thermal resistance, junction - case | RthJC | - | - | 0.26 C/W | - | |
Thermal resistance, junction - ambient | RthJA | - | - | 62 C/W | | device on PCB, minimal footprint |
Static characteristics :
Parameter | Symbol | Values | Unit | Note / Test Condition | ||
| Min. | Typ. | Max. | |||
Drain-source breakdown voltage | V(BR)DSS | 655 | - | - | V | VGS=0V, ID=10mA |
Gate threshold voltage | V(GS)th | - | | 4.2 | V | VDS=VGS, ID=250uA |
Zero gate voltage drain current | IDSS | - | - | 1 | uA | VDS=650V, VGS=0V, Tj=25oC |
Gate-source leakage current | IGSS | - | - | 100 | uA | VGS=30V, VDS=0V |
Drain-source on-state resistance | RDS(on) | - | 0.034 | 0.041 | VGS=10V, ID=28A, Tj=25oC | |
Gate resistance (Intrinsic) | RG | - | 13 | - | f=1MHz, open drain |
Dynamic characteristics
Parameter | Symbol | Values | Unit | Note / Test Condition | ||
Min. | Typ. | Max. | ||||
Input capacitance | Ciss | - | 5966 | - | pF | VGS=0V, VDS=50V, f=1MHz |
Output capacitance | Coss | - | 464 | - | pF | VGS=0V, VDS=50V, f=1M Hz |
Reverse transfer capacitance | Crss | - | 53 | - | pF | VGS=0V, VDS=50V, f=1M Hz |
Turn-on delay time | td(on) | - | 50.4 | - | ns | VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9 |
Rise time | tr | - | 46.8 | - | ns | VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9 |
Turn-off delay time | td(off) |
| - | 326 | - | ns VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9 |
Fall time | tf | - | 48 | - | ns | VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9 |
Gate charge characteristics :
Parameter | Symbol | Values | Unit | Note / Test Condition | ||
Min. | Typ. | Max. | ||||
Gate to source charge | Qgs | - | 38.6 | - | nC | VDD =400V, ID =49.6A, VGS =10V |
Gate to drain charge | Qgd | - | 60 | - | nC | VDD =400V, ID =49.6A, VGS =10V |
Gate charge total | Qg | - | 133.5 | - | nC | VDD =400V, ID =49.6A, VGS =10V |
Gate plateau voltage | Vplateau | - | 7.0 | - | V | VDD =400V, ID =49.6A, VGS =10V |
Reverse diode characteristics :
Parameter | Symbol | Values | Unit | Note / Test Condition | ||
Min. | Typ. | Max. | ||||
Diode forward voltage | VSD | - | 0.65 | - | V | VGS=0V, IF=1A, Tj=25C |
Reverse recovery time | trr | - | 802 | - | ns | Vr=400V,IF=49.6A,di/dt=100A/us see table 8 |
Reverse recovery charge | Qrr | - | 23.21 | - | uC | Vr=400V,IF=49.6A,di/dt=100A/us see table 8 |
Peak reverse recovery current | Irrm | - | 50 | - | A | Vr=400V,IF=49.6A,di/dt=100A/us see table 8 |