+8618001811078

QUICK CALL

Working hours:

Mon-Sat:9.30am to 7.00pm
MOSFET Used In Battery Charger

MOSFET Used In Battery Charger

1.00 - 10.00 USD ($)/Piece

Product Details:

X

MOSFET Used In Battery Charger Price And Quantity

  • 10000 Piece
  • 1.00 - 10.00 USD ($)/Piece

MOSFET Used In Battery Charger Product Specifications

  • SJ-FET

MOSFET Used In Battery Charger Trade Information

  • 20000 Piece Per Month
  • 7-15 Days
  • Asia Australia Central America North America South America Eastern Europe Western Europe Middle East Africa

Product Description

All series of our products (good price performance) are confirmed and popular with the worldwide users, our products have been exported far to Europe, North & sounth America,Japan,south Korea,south-east area and Mid-east area etc.Welcomed you to customer-made and do OEM for current products and new products,and we are looking forward to set up one long-term cooperation relations with you too. Please feel free to contact us for further information.


Packaging and Internal Circuit :

 

Part Name

Package

Marking

RTW65R041E

TO247

RTW65R041E

Key Performance Parameters :

Parameter

Value

Unit

VDS @ Tj,max

700

V

RDS(on),max

41

m

Qg,typ

133.5

nC

ID,pulse

240

A

Maximum ratings :

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Continuous drain current1)

/D


-

80

A

TC=25C

Pulsed drain current2)

ID, pulse

-

-

240

A

TC=25C

Avalanche energy, single pulse

EAS

-

-

980

mJ

Tc=25oC, VDD=50V, L=10mH, RG=25

MOSFET dv/dt ruggedness

dv/dt

-

-

4.7

V/ns

VDS=0...150V

Gate source voltage (static)

VGS

-20

-

20

V

static;

Gate source voltage (dynamic)

VGS

-30

-

30

V

AC (f>1 Hz)

Power dissipation

Ptot

-

-

481

W

TC=25C

Storage temperature

Tstg

-55

-

150

C


Operating junction temperature

Tj

-55

-

150

C


Reverse diode dv/dt3)

dv/dt

-

-

15

V/ns

VDS=0...400V, ISD<=IS, Tj=25C

Thermal characteristics :

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Thermal resistance, junction - case

RthJC

-

-

0.26 C/W

-


Thermal resistance, junction - ambient

RthJA

-

-

62 C/W


device on PCB, minimal footprint

Static characteristics :

Parameter

Symbol

Values

Unit

Note / Test Condition


Min.

Typ.

Max.

Drain-source breakdown voltage

V(BR)DSS

655

-

-

V

VGS=0V, ID=10mA

Gate threshold voltage

V(GS)th

-


4.2

V

VDS=VGS, ID=250uA

Zero gate voltage drain current

IDSS

-

-

1

uA

VDS=650V, VGS=0V, Tj=25oC

Gate-source leakage current

IGSS

-

-

100

uA

VGS=30V, VDS=0V

Drain-source on-state resistance

RDS(on)

-

0.034

0.041

VGS=10V, ID=28A, Tj=25oC

Gate resistance (Intrinsic)

RG

-

13

-

f=1MHz, open drain

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Input capacitance

Ciss

-

5966

-

pF

VGS=0V, VDS=50V, f=1MHz

Output capacitance

Coss

-

464

-

pF

VGS=0V, VDS=50V, f=1M Hz

Reverse transfer capacitance

Crss

-

53

-

pF

VGS=0V, VDS=50V, f=1M Hz

Turn-on delay time

td(on)

-

50.4

-

ns

VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

Rise time

tr

-

46.8

-

ns

VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

Turn-off delay time

td(off)

-

326

-

ns VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

Fall time

tf

-

48

-

ns

VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

Gate charge characteristics :

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Gate to source charge

Qgs

-

38.6

-

nC

VDD =400V, ID =49.6A, VGS =10V

Gate to drain charge

Qgd

-

60

-

nC

VDD =400V, ID =49.6A, VGS =10V

Gate charge total

Qg

-

133.5

-

nC

VDD =400V, ID =49.6A, VGS =10V

Gate plateau voltage

Vplateau

-

7.0

-

V

VDD =400V, ID =49.6A, VGS =10V

Reverse diode characteristics :

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Diode forward voltage

VSD

-

0.65

-

V

VGS=0V, IF=1A, Tj=25C

Reverse recovery time

trr

-

802

-

ns

Vr=400V,IF=49.6A,di/dt=100A/us see table 8

Reverse recovery charge

Qrr

-

23.21

-

uC

Vr=400V,IF=49.6A,di/dt=100A/us see table 8

Peak reverse recovery current

Irrm

-

50

-

A

Vr=400V,IF=49.6A,di/dt=100A/us see table 8


Enter Buying Requirement Details
Email Id
Mobile number

Other Products in 'Mosfet Power Semiconductor' category



We are accepting inquiries from these countries India, Sri Lanka, Pakistan, Bangladesh, Afghanistan and Nepal.
Back to top