Being a highly praised firm in this domain, we have been involved in providing a broad range of IGBT Module. Our qualified professionals make use optimal quality raw material with the help of latest techniques to manufacture these modules in accordance with set industry norms. Especially designed to turn on and off, offered modules are highly demanded in medium to high power electrical appliances such as converters, inverters, traction motor control, etc. In addition to this, our clients can get this IGBT Module from us in different specifications and at pocket friendly rates.
Electrical Characteristics of IGBT at TJ = 25oC (Unless Otherwise Specified)
Parameter | Test Conditions | Min | Type | Max | Unit | |
BVCES | Collector to Emitter Breakdown Voltage | VGE = +V, IC = 1mA | 1200 | | | V |
Absolute Maximum Ratings of IGBT
VCES | Collector to Emitter Voltage | 1200 | V | | | |
VGES | Continuous Gate to Emitter Voltage | ±30 | V | | | |
IC | Continuous Collector Current | TC = 25°C | 200 | A | ||
| | TC = 100°C | 100 | | ||
ICM | Pulse Collector Current | TJ = 150°C | 200 | A | ||
PD | Maximum Power Dissipation (IGBT) | TC = 25°C, TJ = 150°C | 430 | W | ||
tsc | Short Circuit Withstand Time | > 10 | µs | | | |
TJ | Maximum IGBT Junction Temperature | 150 | °C | | | |
TJOP | Maximum Operating Junction Temperature Range | -40 to +150 | °C | | | |
Tstg | Storage Temperature Range | -40 to +125 | °C | | | |