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Features
Absolute Maximum Ratings
Symbol
Parameter
RTF80R850S
RTP80R850S
Unit
VDSS
Drain-Source Voltage
800
V
ID
6.6
4.2
A
IDM
20
VGSS
Gate-Source voltage
+30
EAS
Single Pulsed Avalanche Energy (Note 2)
86
mJ
IAR
1.7
EAR
Repetitive Avalanche Energy (Note 1)
dv/dt
Peak Diode Recovery dv/dt (Note 3)
15
V/ns
dVds/dt
Drain Source voltage slope (Vds=640V)
50
PD
Power Dissipation (TC = 25C)
63
28
W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
C
TL
Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds
300
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