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High Voltage SJ-FET Mosfet Of UPS Power

High Voltage SJ-FET Mosfet Of UPS Power

Product Details:

  • Supply Ability : 20000 Piece Per Month
1.00 - 10.00 USD ($)/Piece
X

Price And Quantity

  • 1.00 - 10.00 USD ($)/Piece
  • 10 Piece

Trade Information

  • 20000 Piece Per Month
  • 7-15 Days

Product Description


Features

  • Multi-Epi process SJ-FET
  • 850V @TJ = 150 C
  • Typ. RDS(on) = 0.8TO-220F
  • Ultra Low Gate Charge (typ. Qg = 9.5nC)
  • 100% avalanche tested

Absolute Maximum Ratings

Symbol

Parameter

RTF80R850S

RTP80R850S

Unit

VDSS

Drain-Source Voltage

800


V

ID

Drain Current -
Continuous (TC = 25C)-
Continuous (TC = 100C)

6.6

4.2


A

IDM

Drain Current - Pulsed  (Note 1)

20


A

VGSS

Gate-Source voltage

+30


V

EAS

Single Pulsed Avalanche Energy (Note 2)

86


mJ

IAR

Avalanche Current  (Note 1)

1.7


A

EAR

Repetitive Avalanche Energy (Note 1)

1.7


A

dv/dt

Peak Diode Recovery dv/dt (Note 3)

15


V/ns

dVds/dt

Drain Source voltage slope (Vds=640V)

50


V/ns

PD

Power Dissipation (TC = 25C)

63

28

W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

C

TL

Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds

300

C


 


RONGTECH INDUSTRY (SHANGHAI) INC.

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