+8618001811078

QUICK CALL

Working hours:

Mon-Sat:9.30am to 7.00pm

Low Voltage Mosfet

Low Voltage Mosfet

Product Details:

  • Supply Ability : 20000 Piece Per Month
1.00 - 10.00 USD ($)/Piece
X

Price And Quantity

  • 10 Piece
  • 1.00 - 10.00 USD ($)/Piece

Trade Information

  • 20000 Piece Per Month
  • 7-15 Days

Product Description

Description:

The RM series products utilizes Norsem's outstanding standard turbo process and packaging techniques to achieve ultral low on-resistance and low gate charge and to provide the industry's best-in-class performance. These features make this series products extremely efficient, temperature characteristics and reliable for use in power management, synchronous rectification, battery protection, load switch and a wide variety of other applications.

Features and Benefits:

 

  • Standard Turbo MOSFET process technology.
  • Optimized the cell structure.
  • Low on-resistance and low gate charge.
  • Featuring low switching and drive losses.
  • Fast switching and reverse body recovery.
  • High ruggedness and robustness.

Main Product Characteristics :

V(BR)DSS

30V

RDS(ON)

5.8m(max.)

ID

100A

Absolute Maximum Ratings  (TC=25oC unless otherwise specified)

Parameter

Symbol

Max.

Unit

Drain-Source Voltage

VDS

30

V

Gate-to-Source Voltage

VGS

+ 20

V

Continuous Drain Current, @ Steady-State 1

ID @ TC = 25oC

100

A

Continuous Drain Current, @ Steady-State

ID @ TC = 100oC

68

A

Pulsed Drain Current 2

IDM

400

A

Power Dissipation

PD @TA = 25oC

83

W

PD @TA = 100oC

37.8

Linear Derating Factor

TA = 25oC

0.66

W/oC

Single Pulse Avalanche Energy3

EAS

780

mJ

Junction-to-Case

RJC

0.6

oC/W

Junction-to-Ambient (PCB Mounted, Steady-State) 4

RJA

62.5

oC/W

Operating Junction and Storage Temperature Range

TJ /TSTG

-55 to + 150

oC

Electrical Characteristics (TC=25oC unless otherwise specified)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250A

30

-

-

V

Drain-to-Source Leakage Current

IDSS

VDS=30V, VGS=0V

-

-

1

uA

TJ=125oC

-

-

50

Gate-to-Source Forward Leakage IGSS

IGSS

VGS =20V

-

-

100

nA

VGS =-20V

-

-

-100

Static Drain-to-Source On- Resistance

RDS (on)

VGS=10V, ID=50A

-

4.3

5.8

m

VGS=4.5V, ID=15A

-

5.2

7.5

Gate Resistance

Rg

f-1MHz

-

1.8

-

Gate Threshold Voltage

VGS (th)

VDS=VGS, ID=250uA

1.0

1.6

2.6

V

Input Capacitance

Ciss

VGS=0V, VDS=5V
f=1MHz

-

2180

-

pF

Output Capacitance

Coss

-

270

-

Reverse transfer capacitance

Crss

-

210

-

Total Gate Charge

Qg

ID=30A, VDS=24V, VGS=10V

-

47.2

-

nC

Gate-to-Source Charge

Qgs

-

8.8

-

Gate-to-Drain("Miller") Charge

Qgd

-

9.6

-

Turn-on Delay Time

td (on)

VGS=4.5V, VDD=20V,

ID=60A, RGEN=1.8

-

12.3

-

nS

Rise Time

tr

-

87.3

-

Turn-Off Delay Time

td (off)

-

140

-

Fall Time

tf

-

82.4

-

Source-Drain Ratings and Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max

Unit

Continuous Source Current

(Body Diode)

Is

MOSFET symbol showing

the integral reverse

p-n junction diode.

-

-

100

A

Pulsed Source Current (Body Diode)

Ism

-

-

400

A

Diode Forward Voltage

VSD

IS=20A, VGS=0V

-

0.9

1.2

V

Reverse Recovery Time

trr

TJ = 25oC, IF =30A, di/dt =

100A/s

-

16.5

-

ns

Reverse Recovery Charge

Qrr

-

6.5

-

uC

Notes :

1. Pulse test: Pulse Width300us, Duty cycle 2%.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. L=0.5mH, VDD=15V, Rg=25,TJ=25oC.
4. Device mounted on FR-4 PCB, 1inch x 0.85inch x 0.062 inch.

Enter Buying Requirement Details
Email Id
Mobile number

Other Products in 'Mosfet Power Semiconductor' category



We are accepting inquiries from these countries India, Sri Lanka, Pakistan, Bangladesh, Afghanistan and Nepal.
Back to top