MOSFET Used In Battery Charger

Part Name

Package

Marking

RTW65R041E

TO247

RTW65R041E

Parameter

Value

Unit

VDS @ Tj,max

700

V

RDS(on),max

41

m

Qg,typ

133.5

nC

ID,pulse

240

A

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Continuous drain current1)

/D

-

80

A

TC=25C

Pulsed drain current2)

ID, pulse

-

-

240

A

TC=25C

Avalanche energy, single pulse

EAS

-

-

980

mJ

Tc=25^oC, VDD=50V, L=10mH, RG=25

MOSFET dv/dt ruggedness

dv/dt

-

-

4.7

V/ns

VDS=0...150V

Gate source voltage (static)

VGS

-20

-

20

V

static;

Gate source voltage (dynamic)

VGS

-30

-

30

V

AC (f>1 Hz)

Power dissipation

Ptot

-

-

481

W

TC=25C

Storage temperature

Tstg

-55

-

150

C

Operating junction temperature

Tj

-55

-

150

C

Reverse diode dv/dt3)

dv/dt

-

-

15

V/ns

VDS=0...400V, ISD<=IS, Tj=25C

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Thermal resistance, junction - case

RthJC

-

-

0.26 C/W

-

Thermal resistance, junction - ambient

RthJA

-

-

62 C/W

device on PCB, minimal footprint

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Drain-source breakdown voltage

V(BR)DSS

655

-

-

V

VGS=0V, ID=10mA

Gate threshold voltage

V(GS)th

-

4.2

V

VDS=VGS, ID=250uA

Zero gate voltage drain current

IDSS

-

-

1

uA

VDS=650V, VGS=0V, Tj=25^oC

Gate-source leakage current

IGSS

-

-

100

uA

VGS=30V, VDS=0V

Drain-source on-state resistance

RDS(on)

-

0.034

0.041

VGS=10V, ID=28A, Tj=25^oC

Gate resistance (Intrinsic)

RG

-

13

-

f=1MHz, open drain

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Input capacitance

Ciss

-

5966

-

pF

VGS=0V, VDS=50V, f=1MHz

Output capacitance

Coss

-

464

-

pF

VGS=0V, VDS=50V, f=1M Hz

Reverse transfer capacitance

Crss

-

53

-

pF

VGS=0V, VDS=50V, f=1M Hz

Turn-on delay time

td(on)

-

50.4

-

ns

VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

Rise time

tr

-

46.8

-

ns

VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

Turn-off delay time

td(off)

-

326

-

ns VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

Fall time

tf

-

48

-

ns

VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Gate to source charge

Qgs

-

38.6

-

nC

VDD =400V, ID =49.6A, VGS =10V

Gate to drain charge

Qgd

-

60

-

nC

VDD =400V, ID =49.6A, VGS =10V

Gate charge total

Qg

-

133.5

-

nC

VDD =400V, ID =49.6A, VGS =10V

Gate plateau voltage

Vplateau

-

7.0

-

V

VDD =400V, ID =49.6A, VGS =10V

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Diode forward voltage

VSD

-

0.65

-

V

VGS=0V, IF=1A, Tj=25C

Reverse recovery time

trr

-

802

-

ns

Vr=400V,IF=49.6A,di/dt=100A/us see table 8

Reverse recovery charge

Qrr

-

23.21

-

uC

Vr=400V,IF=49.6A,di/dt=100A/us see table 8

Peak reverse recovery current

Irrm

-

50

-

A

Vr=400V,IF=49.6A,di/dt=100A/us see table 8