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Battery Charger

Battery Charger

Product Details:

  • Product Type SJ-FET
  • Supply Ability : 20000 Piece Per Month
1.00 - 10.00 USD ($)/Piece
X

Price And Quantity

  • 10 Piece
  • 1.00 - 10.00 USD ($)/Piece

Product Specifications

  • SJ-FET

Trade Information

  • 20000 Piece Per Month
  • 7-15 Days

Product Description

All series of our products (good price performance) are confirmed and popular with the worldwide users, our products have been exported far to Europe, North & sounth America,Japan,south Korea,south-east area and Mid-east area etc.Welcomed you to customer-made and do OEM for current products and new products,and we are looking forward to set up one long-term cooperation relations with you too. Please feel free to contact us for further information.


Packaging and Internal Circuit :

 

Part Name

Package

Marking

RTW65R041E

TO247

RTW65R041E

Key Performance Parameters :

Parameter

Value

Unit

VDS @ Tj,max

700

V

RDS(on),max

41

m

Qg,typ

133.5

nC

ID,pulse

240

A

Maximum ratings :

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Continuous drain current1)

/D


-

80

A

TC=25C

Pulsed drain current2)

ID, pulse

-

-

240

A

TC=25C

Avalanche energy, single pulse

EAS

-

-

980

mJ

Tc=25oC, VDD=50V, L=10mH, RG=25

MOSFET dv/dt ruggedness

dv/dt

-

-

4.7

V/ns

VDS=0...150V

Gate source voltage (static)

VGS

-20

-

20

V

static;

Gate source voltage (dynamic)

VGS

-30

-

30

V

AC (f>1 Hz)

Power dissipation

Ptot

-

-

481

W

TC=25C

Storage temperature

Tstg

-55

-

150

C


Operating junction temperature

Tj

-55

-

150

C


Reverse diode dv/dt3)

dv/dt

-

-

15

V/ns

VDS=0...400V, ISD<=IS, Tj=25C

Thermal characteristics :

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Thermal resistance, junction - case

RthJC

-

-

0.26 C/W

-


Thermal resistance, junction - ambient

RthJA

-

-

62 C/W


device on PCB, minimal footprint

Static characteristics :

Parameter

Symbol

Values

Unit

Note / Test Condition


Min.

Typ.

Max.

Drain-source breakdown voltage

V(BR)DSS

655

-

-

V

VGS=0V, ID=10mA

Gate threshold voltage

V(GS)th

-


4.2

V

VDS=VGS, ID=250uA

Zero gate voltage drain current

IDSS

-

-

1

uA

VDS=650V, VGS=0V, Tj=25oC

Gate-source leakage current

IGSS

-

-

100

uA

VGS=30V, VDS=0V

Drain-source on-state resistance

RDS(on)

-

0.034

0.041

VGS=10V, ID=28A, Tj=25oC

Gate resistance (Intrinsic)

RG

-

13

-

f=1MHz, open drain

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Input capacitance

Ciss

-

5966

-

pF

VGS=0V, VDS=50V, f=1MHz

Output capacitance

Coss

-

464

-

pF

VGS=0V, VDS=50V, f=1M Hz

Reverse transfer capacitance

Crss

-

53

-

pF

VGS=0V, VDS=50V, f=1M Hz

Turn-on delay time

td(on)

-

50.4

-

ns

VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

Rise time

tr

-

46.8

-

ns

VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

Turn-off delay time

td(off)

-

326

-

ns VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

Fall time

tf

-

48

-

ns

VDD=400V,VGS=13V,ID=49.6A RG=1.7;see table 9

Gate charge characteristics :

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Gate to source charge

Qgs

-

38.6

-

nC

VDD =400V, ID =49.6A, VGS =10V

Gate to drain charge

Qgd

-

60

-

nC

VDD =400V, ID =49.6A, VGS =10V

Gate charge total

Qg

-

133.5

-

nC

VDD =400V, ID =49.6A, VGS =10V

Gate plateau voltage

Vplateau

-

7.0

-

V

VDD =400V, ID =49.6A, VGS =10V

Reverse diode characteristics :

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Diode forward voltage

VSD

-

0.65

-

V

VGS=0V, IF=1A, Tj=25C

Reverse recovery time

trr

-

802

-

ns

Vr=400V,IF=49.6A,di/dt=100A/us see table 8

Reverse recovery charge

Qrr

-

23.21

-

uC

Vr=400V,IF=49.6A,di/dt=100A/us see table 8

Peak reverse recovery current

Irrm

-

50

-

A

Vr=400V,IF=49.6A,di/dt=100A/us see table 8


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