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Medium Voltage Mosfet

Medium Voltage Mosfet

Product Details:

  • Supply Ability : 20000 , , Piece Per Month
1.00 - 10.00 USD ($)/Piece
X

Price And Quantity

  • 1.00 - 10.00 USD ($)/Piece
  • 10 , , Piece

Trade Information

  • 20000 , , Piece Per Month
  • 7-15 Days

Product Description

Description:

The RT series products utilizes Rongtech's outstanding grand turbo process and packaging techniques to achieve ultral low on-resistance and low gate charge and to provide the industry's best-in-class performance. These features make this series products extremely efficient, temperature characteristics and reliable for use in synchronous rectification, battery protection, sever power supply, motor, micro-inverter etc.

Features and Benefits:

 

  • Grand Turbo MOSFET process technology.
  • Optimized cell structure for reducing noise and ringing.
  • Low on-resistance and low gate charge.
  • Fast switching and reverse body recovery.
  • Featuring low switching and drive losses.
  • High ruggedness and robustness. 

 

Main Product Characteristics : 

V(BR)DSS

100V

RDS(ON)

4.4m(max.)

ID

180A

Absolute Maximum Ratings (TC=25C unless otherwise specified) :

Parameter

Symbol

Max.

Unit

Drain-Source Voltage

VDS

100

V

Gate-to-Source Voltage

VGS

+ 20

V

Continuous Drain Current, @ Steady-State 1

ID @ TC = 25oC

180

A

Continuous Drain Current, @ Steady-State

ID @ TC = 100oC

130

A

Pulsed Drain Current 2

IDM

720

A

Power Dissipation

PD @TC = 25oC

208

W

Linear Derating Factor

1.7

W/oC

Single Pulse Avalanche Energy3

EAS

780

mJ

Junction-to-Case

RJC

0.6

C/W

Junction-to-Ambient (PCB Mounted, Steady-State) 4

RJA

62.5

C/W

Operating Junction and Storage Temperature Range

TJ /TSTG

-55 to + 150

C

Electrical Characteristics (TC=25C unless otherwise specified)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250A

100

-

-

V

Drain-to-Source Leakage Current

IDSS

VDS=100V, VGS=0V

-

-

1

uA

-

-

50

Gate-to-Source Forward Leakage IGSS

IGSS

VGS =20V

-

-

100

nA

VGS =-20V

-

-

-100

Static Drain-to-Source On- Resistance

RDS (on)

VGS=10V, ID=50A

-

3.6

4.4

m

Gate Resistance

Rg

-1MHz


1.8


Gate Threshold Voltage

VGS (th)

VDS=VGS, ID=250uA

2.2

3

3.9

V

Input Capacitance

Ciss

VGS=0V, VDS=5V
=1MHz

-

8402

-

pF

Output Capacitance

Coss

-

890

-

Reverse transfer capacitance

Crss

-

34

-

Total Gate Charge

Qg

ID=20A, VDS=50V, VGS=10V

-

152

-

nC

Gate-to-Source Charge

Qgs

-

45.5

-

Gate-to-Drain("Miller") Charge

Qgd

-

45.2

-

Turn-on Delay Time

td (on)

VGS=10T, VDS=50V, RL=1, RGEN=3

-

40

-

nS

Rise Time

tr

-

66

-

Turn-Off Delay Time

td (off)

-

101

-

Fall Time

tf

-

41

-

Source-Drain Ratings and Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max

Unit

Continuous Source Current

(Body Diode)

Is

MOSFET symbol showing

the integral reverse

p-n junction diode.

-

-

180

A

Pulsed Source Current (Body Diode)

Ism

-

-

720

A

Diode Forward Voltage

VSD

IS=50A, VGS=0V

-

1

1.2

V

Reverse Recovery Time

trr

TJ = 25C, IF =50A, di/dt =

100A/s


82


ns

Reverse Recovery Charge

Qrr


0.24


uc

Notes :

1. Pulse test: Pulse Width<300us, Duty cycle <2%.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. L=0.5mH, VDD=80V, TJ=25oC.
4. Device mounted on FR-4 PCB, 1inch x 0.85inch x 0.062 inch.


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