The RTW600V 77A power MOSFET is a Low voltage N channel Multi-EPI Super-Junction power MOSFET sample with advanced technology to have better characteristics, such as fast switching time, low Ciss and Crss, low on resistance and excellent avalanche characteristics, making it especially suitable for applications which require superior power density and outstanding efficiency.
APPLICATIONS
Symbol | Parameter | RTW77N60SD | Unit |
VDSS | Drain-Source Voltage | 600 | V |
ID | Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) | 77* 45* | A |
IDM | Drain Current - Pulsed (Note 1) | 260 | A |
VGSS | Gate-Source voltage | ±30 | V |
EAS | Single Pulsed Avalanche Energy (Note 2) | 1950 | mJ |
IAR | Repetitive Avalanche Current (Note 1) | 13 | A |
EAR | Repetitive Avalanche Energy (Note 1) | 2.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 15 | V/ns |
dVds/dt | Drain Source voltage slope (Vds=480V) | 50 | V/ns |
PD | Power Dissipation (TC = 25℃) | 400 | W |
TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | ℃ |
TL | Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds | 300 | ℃ |
Thermal Characteristics
Symbol | Parameter | RTW77N60SD | Unit |
RθJC | Thermal Resistance, Junction-to-Case | 0.32 | ℃/W |
RθCS | Thermal Resistance, Case-to-Sink Typ. | 0.5 | ℃/W |
RθJA | Thermal Resistance, Junction-to-Ambient | 62 | ℃/W |