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High Voltage Cool Mosfet

High Voltage Cool Mosfet

Product Details:

  • Supply Ability : 20000 Piece Per Month
1.00 - 10.00 USD ($)/Piece
X

Price And Quantity

  • 1.00 - 10.00 USD ($)/Piece
  • 10 Piece

Trade Information

  • 20000 Piece Per Month
  • 7-15 Days

Product Description

Rongtech has series Multi-EPI Super-Junction power MOSFET platforms for voltage up 500V to 1000 volts, both with design service and manufacturing capability, including cell, termination design and simulation

The RTW600V 77A power MOSFET is a Low voltage N channel Multi-EPI Super-Junction power MOSFET sample with advanced technology to have better characteristics, such as fast switching time, low Ciss and Crss, low on resistance and excellent avalanche characteristics, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

 

  • New revolutionary high voltage technology 
  • Better RDS(on) in TO-247 •Ultra Low gate charge 
  • Periodic avalanche rated 
  • Extreme dv/dt rated 
  • Ultra low effective capacitances 
  • Intrinsc fast-recovery body diode 
  • Pb-free lead planting
  • RDS(ON)=0.041Ω @VGS = 10V VDS = 600V ID (@ VGS=10V) = 35A 

 

 APPLICATIONS

 

  • Consumer 
  • EV Charger 
  • PFC stages for server & telecom 
  • SMPS 
  • UPS
  • Solar 
  • Lighting
Maximum rating sat Tj = 25 ℃ , unlessotherwise specified.

 

Symbol

Parameter

RTW77N60SD

Unit

VDSS

Drain-Source Voltage

600

V

ID

Drain Current -Continuous (TC = 25) -Continuous (TC = 100)

77* 45*

A

IDM

Drain Current - Pulsed (Note 1)

260

A

VGSS

Gate-Source voltage

±30

V

EAS

Single Pulsed Avalanche Energy (Note 2)

1950

mJ

IAR

Repetitive Avalanche Current (Note 1)

13

A

EAR

Repetitive Avalanche Energy (Note 1)

2.5

mJ

dv/dt

Peak Diode Recovery dv/dt (Note 3)

15

V/ns

dVds/dt

Drain Source voltage slope (Vds=480V)

50

V/ns

PD

Power Dissipation (TC = 25)

400

W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

TL

Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds

300

Thermal Characteristics

Symbol

Parameter

 RTW77N60SD

Unit

RθJC

 Thermal Resistance, Junction-to-Case

0.32

/W

RθCS

Thermal Resistance, Case-to-Sink Typ.

0.5

/W

RθJA

Thermal Resistance, Junction-to-Ambient

62

/W

 


RONGTECH INDUSTRY (SHANGHAI) INC.

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